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Wireless Body Area Network/Prof. Chen-Yi Lee

 We have successfully developed a high-performance HfO2, resistive switching crossbar memory array, integrated with vertically stacked bipolar TiO2, selectors to suppress parasitic sneak current. This is the first demonstration of the bipolar resistive-switching crossbar memory array without read interference. In addition, the crossbar memory array was fabricated on a low-cost plastic substrate using a complete room-temperature process, and shows excellent flexible non-volatile memory characteristics. This research result has been presented in IEDM 2011.