NYCU-GWC Research Center for Advanced Compound Semiconductors

With the rapid development of emerging technologies and applications such as 5G and electric vehicles, the demand for power semiconductors is heating up. Focusing on the development potential of third-generation semiconductor materials, silicon carbide (SiC) and gallium nitride (GaN), GlobalWafers Co., Ltd (GWC) signed a contract with National Yang Ming Chiao Tung University on July 27, 2020 to jointly establish a compound semiconductor research center to jointly develop third-generation semiconductor materials, including but not limited to 6-inch to 8-inch silicon carbide (SiC) and gallium nitride (GaN), with a view to quickly establish Taiwan’s compound semiconductor industry chain.

National Yang Ming Chiao Tung University leads Taiwan’s semiconductor research. For example, Taiwan’s first silicon wafer was completed in the Yang Ming Chiao Tung University laboratory. In this research center, the Yang Ming Chiao Tung University team with cross-scale scientific and theoretical research disciplines and talents integrate GWC’s unique wafer production process and facilities to jointly develop innovative high-capacity related compound semiconductor wafer trial mass production technologies to manufacture large size, high-quality, and low-defect wafers. In general, the main research topics include: SiC crystal growth technology, thin film analysis and measurement technology, and compound semiconductor integrated circuit design.